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1. product pro?le 1.1 general description pnp low v cesat transistor in a sot54 (sc-43/to-92) plastic package. 1.2 features n sot54 package n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high ef?ciency leading to less heat generation. 1.3 applications n major application segments: u automotive 42 v power u telecom infrastructure u industrial. n peripheral driver: u driver in low supply voltage applications (e.g. lamps and leds) u inductive load driver (e.g. relays, buzzers and motors). n dc-to-dc converter. 1.4 quick reference data PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor rev. 02 10 august 2004 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage - - - 100 v i c collector current (dc) - - - 1a i cm peak collector current - - - 3a r cesat equivalent on-resistance - - 320 m w
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 2 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] made in china. table 2: discrete pinning pin description simpli?ed outline symbol 1 base 2 collector 3 emitter 321 321 sym029 2 3 1 table 3: ordering information type number package name description version PBSS9110S - plastic single-ended leaded (through hole) package; 3 leads sot54 table 4: marking type number marking code PBSS9110S s9110s [1]
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 3 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 5. limiting values [1] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - - 120 v v ceo collector-emitter voltage open base - - 100 v v ebo emitter-base voltage open collector - - 5v i cm peak collector current t j(max) - - 3a i c collector current (dc) - - 1a i b base current (dc) - - 0.3 a p tot total power dissipation t amb 25 c [1] - 830 mw t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) 1 cm 2 collector mounting pad. (2) standard footprint. fig 1. power derating curves. t amb ( c) 0 160 120 40 80 001aaa816 400 600 200 800 1000 p tot (mw) 0 (1) (2)
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 4 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. table 6: thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air [1] 150 k/w mounted on fr4 pcb; standard footprint. (1) d =1. (2) d = 0.75. (3) d = 0.5. (4) d = 0.33. (5) d = 0.2. (6) d = 0.1. (7) d = 0.05. (8) d = 0.02. (9) d = 0.01. (10) d =0. fig 2. transient thermal impedance as a function of pulse time; typical values. 001aaa817 10 1 10 2 10 3 z th (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 5 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = - 80 v; i e =0 a - - - 100 na v cb = - 80 v; i e = 0 a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 80 v; v be =0 v - - - 100 na i ebo emitter-base cut-off current v eb = - 4 v; i c =0 a - - - 100 na h fe dc current gain v ce = - 5 v; i c = - 1 ma 150 - - v ce = - 5 v; i c = - 250 ma 150 - - v ce = - 5 v; i c = - 0.5 a [1] 150 - 450 v ce = - 5 v; i c = - 1a [1] 125 - - v cesat collector-emitter saturation voltage i c = - 250 ma; i b = - 25 ma - - - 120 mv i c = - 500 ma; i b = - 50 ma - - - 180 mv i c = - 1 a; i b = - 100 ma - - - 320 mv r cesat equivalent on-resistance i c = - 1 a; i b = - 100 ma [1] - 170 320 m w v besat base-emitter saturation voltage i c = - 1 a; i b = - 100 ma - - - 1.1 v v beon base-emitter turn-on voltage i c = - 1 a; v ce = - 5v - - - 1.0 v f t transition frequency i c = - 50 ma; v ce = - 10 v; f = 100 mhz 100 - - mhz c c collector capacitance i e =i e = 0 a; v cb = - 10 v; f=1mhz --17pf
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 6 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor v ce = - 10 v. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 55 c. v ce = - 10 v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. fig 3. dc current gain as a function of collector current; typical values. fig 4. base-emitter voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 55 c. t amb =25 c. (1) i c /i b = 50. (2) i c /i b = 20. fig 5. collector-emitter saturation voltage as a function of collector current; typical values. fig 6. collector-emitter saturation voltage as a function of collector current; typical values. 001aaa376 200 400 600 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 001aaa377 - 0.4 - 0.8 - 1.2 v be (v) 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 001aaa378 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) 001aaa380 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2)
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 7 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor i c /i b = 10. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. i c /i b = 20. t amb =25 c. fig 7. base-emitter saturation voltage as a function of collector current; typical values. fig 8. base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. t amb =25 c. (1) i c /i b = 50. (2) i c /i b = 20. fig 9. equivalent on-resistance as a function of collector current; typical values. fig 10. equivalent on-resistance as a function of collector current; typical values. 001aaa381 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 1 - 10 v besat (v) - 10 - 1 (1) (2) (3) 001aaa379 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 1 - 10 v besat (v) - 10 - 1 001aaa382 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 10 2 10 3 rcesat ( w ) 10 - 1 (1) (2) (3) 001aaa383 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 10 2 10 3 rcesat ( w ) 10 - 1 (1) (2)
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 8 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor (1) i b = - 45 ma. (2) i b = - 40.5 ma. (3) i b = - 36 ma. (4) i b = - 31.5 ma. (5) i b = - 27 ma. (6) i b = - 22.5 ma. (7) i b = - 18 ma. (8) i b = - 13.5 ma. (9) i b = - 9 ma. (10) i b = - 4.5 ma. fig 11. collector current as a function of collector-emitter voltage; typical values. v ce (v) 0 - 5 - 4 - 2 - 3 - 1 001aaa384 - 0.8 - 1.2 - 0.4 - 1.6 - 2 i c (a) 0 (1) (2) (8) (10) (9) (3) (6) (7) (4) (5)
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 9 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 8. package outline fig 12. package outline. unit a references outline version european projection issue date iec jedec jeita mm 5.2 5.0 b 0.48 0.40 c 0.45 0.38 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max. 2.5 b 1 0.66 0.55 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43a 97-02-28 04-06-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 10 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 9. revision history table 8: revision history document id release date data sheet status change notice order number supersedes PBSS9110S_2 20040810 product data - 9397 750 13644 PBSS9110S_1 modi?cations: ? package outline updated, see section 8 p ac kage outline . PBSS9110S_1 20040607 product data - 9397 750 12843 -
philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 11 of 12 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
9397 750 13644 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 10 august 2004 12 of 12 philips semiconductors PBSS9110S 100 v, 1 a pnp low v cesat (biss) transistor 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information . . . . . . . . . . . . . . . . . . . . 11

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